Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition / Qiaomu Liu in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 2 (06/2009)  

[article]  inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 2 (06/2009) . - p. 269-273 Titre : Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition Type de document : texte imprimé Auteurs : Qiaomu Liu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur ; Wang Yiguang, Auteur Année de publication : 2009 Article en page(s) : p. 269-273 Note générale : Bibliogr. Langues : Américain (ame) Catégories : Carbure de zirconium Dépôt chimique en phase vapeur Revêtement métallique Index. décimale : 667.9 Revêtements et enduits Résumé : Zirconium carbide films were grown on graphite slices by chemical vapor deposition using methane, zirconium tetrachloride, and hydrogen as precursors. The growth rate of zirconium carbide films as a function of temperature was investigated. The morphologies of these films at different temperatures were also observed by scanning electron microscopy. The results indicated that the deposition of zirconium carbide was dominated by gas nucleation at temperatures below 1523 K, and by surface process at temperatures higher than 1523 K. By comparison of the deposition activation energies for zirconium carbide and deposited carbon, it was determined that the carbon deposition was the controlled process during the growing of zirconium carbide films. The effect of temperatures on the morphologies of zirconium carbide films was also discussed, based on the carbon deposition process. DOI : 10.1007/s11998-008-9117-5 En ligne : https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9117-5.pdf Format de la ressource électronique : Pdf Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=5641 [article]

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Solid-state reactions of silicon carbide and chemical vapor deposited niobium / Wang Yiguang in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 3 (09/2009)  

[article]  inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 3 (09/2009) . - p. 413-417 Titre : Solid-state reactions of silicon carbide and chemical vapor deposited niobium Type de document : texte imprimé Auteurs : Wang Yiguang, Auteur ; Liu Qiaomu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur Année de publication : 2009 Article en page(s) : p. 413-417 Note générale : Bibliogr. Langues : Américain (ame) Tags : Chemical  vapor  deposition  Thermodynamics  Solid-state  reactions  Niobium  Silicon  carbide Index. décimale : 667.9 Revêtements et enduits Résumé : Niobium films were deposited on silicon carbide by chemical vapor deposition using niobium chloride and hydrogen at a temperature range of 900–1300°C. The solid-state reactions between the deposited niobium and silicon carbide matrix were studied by examining the obtained films using X-ray diffraction and energy dispersion spectroscopy. The results indicated that niobium silicides could be formed at the beginning, which blocked further reactions between carbon and niobium to form niobium carbides. When the deposition temperature was increased, silicon would diffuse outward, which allowed the formation of niobium carbides. The reaction process and mechanism are discussed based on the thermodynamics and kinetics. DOI : 10.1007/s11998-008-9129-1 En ligne : https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9129-1.pdf Format de la ressource électronique : Pdf Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=6123 [article]

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