Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCI3-C3H6-H2 mixture / Yongsheng Liu in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 4 (12/2009)  

[article]  inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 4 (12/2009) . - p. 509-515 Titre : Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCI3-C3H6-H2 mixture Type de document : texte imprimé Auteurs : Yongsheng Liu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur ; Wenbin Yang, Auteur ; Yongdong Xu, Auteur ; Qinfeng Zeng, Auteur Année de publication : 2009 Article en page(s) : p. 509-515 Note générale : Bibliogr. Langues : Américain (ame) Tags : Boron-doped  carbon  Low-pressure  Chemical  vapor  deposition  C/B  ratio Index. décimale : 667.9 Revêtements et enduits Résumé : Propylene was used to fabricate boron-doped carbon coatings by low-pressure chemical vapor deposition. The effects of carbon/boron (C/B) ratio in reactants on the deposition rate, morphologies, and bonding states of the deposits were investigated. Deposition rate increased with increasing C/B ratio, when C/B ratio was less than 4.0. Then, deposition rate decreased with increasing C/B ratio. The maximum rate was 500 nm/h. SEM results showed that cross section morphologies and thickness of deposits were influenced by C/B ratio. Morphologies were compact and not-delaminated with a low C/B ratio, however nanoscale delamination occurred in the deposits with a high C/B ratio. The infiltration characteristic was also influenced by the C/B ratio. The suitable C/B ratio was 1.0–2.0 for infiltration in a T300 carbon bundle. XPS results showed that carbon content is major in the deposits with all C/B ratios. The boron contents decreased and carbon contents increased with increasing C/B ratio. B-sub-C and BC2O were main bonding states. The total contents of B-sub-C and BC2O were above 60.0 at.% with all C/B ratios. DOI : 10.1007/s11998-008-9128-2 En ligne : https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9128-2.pdf Format de la ressource électronique : Pdf Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=7694 [article]

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Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition / Qiaomu Liu in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 2 (06/2009)  

[article]  inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 2 (06/2009) . - p. 269-273 Titre : Morphologies and growth mechanisms of zirconium carbide films by chemical vapor deposition Type de document : texte imprimé Auteurs : Qiaomu Liu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur ; Wang Yiguang, Auteur Année de publication : 2009 Article en page(s) : p. 269-273 Note générale : Bibliogr. Langues : Américain (ame) Catégories : Carbure de zirconium Dépôt chimique en phase vapeur Revêtement métallique Index. décimale : 667.9 Revêtements et enduits Résumé : Zirconium carbide films were grown on graphite slices by chemical vapor deposition using methane, zirconium tetrachloride, and hydrogen as precursors. The growth rate of zirconium carbide films as a function of temperature was investigated. The morphologies of these films at different temperatures were also observed by scanning electron microscopy. The results indicated that the deposition of zirconium carbide was dominated by gas nucleation at temperatures below 1523 K, and by surface process at temperatures higher than 1523 K. By comparison of the deposition activation energies for zirconium carbide and deposited carbon, it was determined that the carbon deposition was the controlled process during the growing of zirconium carbide films. The effect of temperatures on the morphologies of zirconium carbide films was also discussed, based on the carbon deposition process. DOI : 10.1007/s11998-008-9117-5 En ligne : https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9117-5.pdf Format de la ressource électronique : Pdf Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=5641 [article]

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Solid-state reactions of silicon carbide and chemical vapor deposited niobium / Wang Yiguang in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 3 (09/2009)  

[article]  inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 3 (09/2009) . - p. 413-417 Titre : Solid-state reactions of silicon carbide and chemical vapor deposited niobium Type de document : texte imprimé Auteurs : Wang Yiguang, Auteur ; Liu Qiaomu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur Année de publication : 2009 Article en page(s) : p. 413-417 Note générale : Bibliogr. Langues : Américain (ame) Tags : Chemical  vapor  deposition  Thermodynamics  Solid-state  reactions  Niobium  Silicon  carbide Index. décimale : 667.9 Revêtements et enduits Résumé : Niobium films were deposited on silicon carbide by chemical vapor deposition using niobium chloride and hydrogen at a temperature range of 900–1300°C. The solid-state reactions between the deposited niobium and silicon carbide matrix were studied by examining the obtained films using X-ray diffraction and energy dispersion spectroscopy. The results indicated that niobium silicides could be formed at the beginning, which blocked further reactions between carbon and niobium to form niobium carbides. When the deposition temperature was increased, silicon would diffuse outward, which allowed the formation of niobium carbides. The reaction process and mechanism are discussed based on the thermodynamics and kinetics. DOI : 10.1007/s11998-008-9129-1 En ligne : https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9129-1.pdf Format de la ressource électronique : Pdf Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=6123 [article]

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