| Titre : |
Effect of C/B ratio in reactants on low-pressure CVD boron-doped carbon deposited from a BCI3-C3H6-H2 mixture |
| Type de document : |
texte imprimé |
| Auteurs : |
Yongsheng Liu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur ; Wenbin Yang, Auteur ; Yongdong Xu, Auteur ; Qinfeng Zeng, Auteur |
| Année de publication : |
2009 |
| Article en page(s) : |
p. 509-515 |
| Note générale : |
Bibliogr. |
| Langues : |
Américain (ame) |
| Tags : |
Boron-doped carbon Low-pressure Chemical vapor deposition C/B ratio |
| Index. décimale : |
667.9 Revêtements et enduits |
| Résumé : |
Propylene was used to fabricate boron-doped carbon coatings by low-pressure chemical vapor deposition. The effects of carbon/boron (C/B) ratio in reactants on the deposition rate, morphologies, and bonding states of the deposits were investigated. Deposition rate increased with increasing C/B ratio, when C/B ratio was less than 4.0. Then, deposition rate decreased with increasing C/B ratio. The maximum rate was 500 nm/h. SEM results showed that cross section morphologies and thickness of deposits were influenced by C/B ratio. Morphologies were compact and not-delaminated with a low C/B ratio, however nanoscale delamination occurred in the deposits with a high C/B ratio. The infiltration characteristic was also influenced by the C/B ratio. The suitable C/B ratio was 1.0–2.0 for infiltration in a T300 carbon bundle. XPS results showed that carbon content is major in the deposits with all C/B ratios. The boron contents decreased and carbon contents increased with increasing C/B ratio. B-sub-C and BC2O were main bonding states. The total contents of B-sub-C and BC2O were above 60.0 at.% with all C/B ratios. |
| DOI : |
10.1007/s11998-008-9128-2 |
| En ligne : |
https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9128-2.pdf |
| Format de la ressource électronique : |
Pdf |
| Permalink : |
https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=7694 |
in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 4 (12/2009) . - p. 509-515
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