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Solid-state reactions of silicon carbide and chemical vapor deposited niobium / Wang Yiguang in JOURNAL OF COATINGS TECHNOLOGY AND RESEARCH, Vol. 6, N° 3 (09/2009)

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inJOURNAL OF COATINGS TECHNOLOGY AND RESEARCH > Vol. 6, N° 3 (09/2009) . - p. 413-417

Titre :	Solid-state reactions of silicon carbide and chemical vapor deposited niobium
Type de document :	texte imprimé
Auteurs :	Wang Yiguang, Auteur ; Liu Qiaomu, Auteur ; Litong Zhang, Auteur ; Laifei Cheng, Auteur
Année de publication :	2009
Article en page(s) :	p. 413-417
Note générale :	Bibliogr.
Langues :	Américain (ame)
Tags :	Chemical vapor deposition Thermodynamics Solid-state reactions Niobium Silicon carbide
Index. décimale :	667.9 Revêtements et enduits
Résumé :	Niobium films were deposited on silicon carbide by chemical vapor deposition using niobium chloride and hydrogen at a temperature range of 900–1300°C. The solid-state reactions between the deposited niobium and silicon carbide matrix were studied by examining the obtained films using X-ray diffraction and energy dispersion spectroscopy. The results indicated that niobium silicides could be formed at the beginning, which blocked further reactions between carbon and niobium to form niobium carbides. When the deposition temperature was increased, silicon would diffuse outward, which allowed the formation of niobium carbides. The reaction process and mechanism are discussed based on the thermodynamics and kinetics.
DOI :	10.1007/s11998-008-9129-1
En ligne :	https://link.springer.com/content/pdf/10.1007%2Fs11998-008-9129-1.pdf
Format de la ressource électronique :	Pdf
Permalink :	https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=6123

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