Chemical vapour deposition / Debdas Pradhan in PAINTINDIA, Vol. LXIII, N° 7 (07/2013)

[article]  inPAINTINDIA > Vol. LXIII, N° 7 (07/2013) . - p. 72-81 Titre : Chemical vapour deposition Type de document : texte imprimé Auteurs : Debdas Pradhan, Auteur Année de publication : 2013 Article en page(s) : p. 72-81 Note générale : Bibliogr. Langues : Anglais (eng) Catégories : Dépôt chimique en phase vapeur Revêtements Index. décimale : 667.9 Revêtements et enduits Résumé : Chemical Va pour Deposition (CVD) of films and coatings involves the chemical reactions of gaseous reactants on or near the vicinity of a heated substrate surface. This atomistic deposition method can provide highly pure materials with structural control at atomic or nanometer scale level. Moreover, it can produce single layer, multilayer, composite, nanostructured, and functionally graded coating materials with well controlled dimension and unique structure at low processing temperatures. Furthermore, the unique feature of CVD over other deposition techniques such as the non-line-of-sight-deposition capability has allowed the coating of complex shape engineering components and the fabrication of nano-devices, carbon-carbon (C-C) composites, ceramic matrix composite (CMCs), free standing shape components. The versatility of CVD had led to rapid growth and it has become one of the main processing methods for the deposition of thin films and coatings for a wide range of applications, including semiconductors (e.g. Si, Ge, Si „Ge, III-V, II-Vl) for microelectronics, optoelectronics, energy conversion devices; dielectrics (e.g. SiO„ AIN, Si,N4) for microelectronics; refractory ceramic materials (e.g. SiC, TiN, TiB, AI,0„ BN, MoSi, ZrO) used for hardcoatings, protection against corrosion, oxidation or as diffusion barriers ; metallic films (e.g. W, Mo, Al, Cu, Pt) for microelectronics and for protective coatings; fibre production (e.g. B and SiC monofilament fibres) and fibre coating. Note de contenu : - PROCESS FACTORS : Substrates - Reaction temperature - Process principles and deposition mechanism - CVD APPARATUS - ENERGY SOURCES - PRECURSORS : Typical precursor materials - Coating characteristics - Types of CVD - 1. APCVD (Atmospheric Pressure Chemical Vapour deposition) - 2. LPCVD (Low-Pressure Chemical Vapour Deposition) - 3. MOCVD (Metal-Organic Chemical Vapour Deposition) - 4. PECVD (Plasma-Enhanced Chemical Vapour Deposition) - 5. LCVD (Laser Chemical Vapour Deposition) - 6. PCVD (Photochemical Vapour Deposition - 7. CVI (Chemical Vapour Infiltration) - 8. CBE ( Chemical Beam Epitaxy) - Advantages over MBE - Advantages over MOCVD - Shortcomings of CBE Permalink : https://e-campus.itech.fr/pmb/opac_css/index.php?lvl=notice_display&id=19654 [article]

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